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  -2a -30v bipolar transistor Datasheet PDF File

For -2a -30v bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J

Continental Device India Limited
Part No. CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J
Description 0.625W General Purpose NPN Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose NPN Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose NPN Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose NPN Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
NPN SILICON PLANAR transistor

File Size 147.61K  /  4 Page

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    CDIL[Continental Device India Limited]
Part No. CD9012 CD9012J CD9012D CD9012E CD9012F CD9012G CD9012H CD9012I CD9012DEF CD9012GHI
Description 0.625W General Purpose PNP Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose PNP Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose PNP Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose PNP Plastic Leaded transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
PNP SILICON PLANAR transistor

File Size 85.79K  /  3 Page

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    AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1
Description TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon bipolar transistor
Low Current High Performance NPN Silicon bipolar transistor
Low Current, High Performance NPN Silicon bipolar transistor

File Size 121.09K  /  10 Page

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    CT30SM-12 CT30SM-1

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30SM-12 CT30SM-1
Description MITSUBISHI INSULATED GATE bipolar transistor GENERAL INVERTER UPS USE
Integrated Gate bipolar transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE

File Size 35.85K  /  3 Page

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    http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FQI45N03L FQB45N03L
Description 30V LOGIC N-Channel MOSFET
transistor | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-263AB

File Size 652.40K  /  9 Page

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    ROHM[Rohm]
Part No. 2SB1694
Description transistors > Small Signal bipolar transistors(up to 0.6W)
General purpose amplification (-30v, -1A)
General purpose amplification (−30V −1A)

File Size 62.86K  /  2 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description INSULATED GATE bipolar transistor
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE bipolar transistor

File Size 647.10K  /  10 Page

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    CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305

CENTRAL[Central Semiconductor Corp]
Part No. CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305
Description SMD bipolar Power transistor NPN General Purpose Amplifier/Switch
SMD bipolar Power transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER transistor

File Size 72.36K  /  2 Page

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    CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O CIL2331O CIL2328AO CIL928AO CIL916LA CIL1020

Infineon Technologies AG
Part No. CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O CIL2331O CIL2328AO CIL928AO CIL916LA CIL1020
Description transistor | BJT | NPN | 250V V(BR)CEO | TO-237VAR
transistor | BJT | NPN | 300V V(BR)CEO | TO-237
transistor | BJT | NPN | 150V V(BR)CEO | TO-237
transistor | BJT | NPN | 60V V(BR)CEO | TO-237VAR
transistor | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
transistor | BJT | NPN | 200V V(BR)CEO | TO-237VAR
transistor | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
transistor | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
transistor | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37
transistor | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA

File Size 935.67K  /  9 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT

File Size 139.45K  /  5 Page

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