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-13a Datasheet PDF File

For -13a Found Datasheets File :: 5387 Search Time::1.953ms
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				Fuji Electric
Part No.	FMP13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 72 nc gate-source charge q gs - 16 24 gate-drain charge q gd - 16 24 gate-drain crossover charge q sw - 7 10.5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltag...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	476.33K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text	... RDS(on) 0.20 0.20 0.20 0.25 ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4# TECHNOLOGY c SMD-0.5 International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices ha...
Description	200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	123.99K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMI13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 72 nc gate-source charge q gs - 16 24 gate-drain charge q gd - 16 24 gate-drain crossover charge q sw - 7 10.5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltag...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	483.57K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMH13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 72 nc gate-source charge q gs - 16 24 gate-drain charge q gd - 16 24 gate-drain crossover charge q sw - 7 10.5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltag...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	487.86K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMC13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 72 nc gate-source charge q gs - 16 24 gate-drain charge q gd - 16 24 gate-drain crossover charge q sw - 7 10.5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltag...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	483.93K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	BSS110D74Z BSS110D27Z BSS110D26Z
OCR Text	...t high side switch. bss84: -0.13a, -50v. r ds(on ) = 10 w @ v gs = -5v. bss110: -0.17a, -50v. r ds(on ) = 10 w @ v gs = -10v voltage controlled p-channel small signal switch. high density cell design for low r ds(on) . high satura...
Description	170 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
File Size	145.34K / 7 Page	View it Online	Download Datasheet

				Linfinity
Part No.	SM625
OCR Text	.................................. 13a 13a 13a drive current, i 3 ............................................. -0.3a -0.3a -0.3a 1.5 3.5 1.25 1.75 10 10 sg625/626/627 min. typ. max. 1.0 2.5 0.85 0.95 0.1 10 1.0 500 sm625/sm626/sm627 4/90...
Description	(SM62x) SWITCHING REGULATOR POWER OUTPUT STAGES
File Size	77.11K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGPH30S
OCR Text	...) 3.0v @v ge = 15v, i c = 13a e c g n - c h a n n e l description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time...
Description	1200V Discrete IGBT in a TO-3P (TO-247AC) package
File Size	39.10K / 2 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FML13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 56 nc gate-source charge q gs - 16 24 drain-source crossover charge q sw - 7 10.5 gate-drain charge q gd - 16 24 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-volt...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	391.79K / 5 Page	View it Online	Download Datasheet

For -13a Found Datasheets File :: 5387 Search Time::1.953ms
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