u003d pdf Datasheet P12 Description --- IC-ON-LINE


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For u003d Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				International Rectifier, Corp.
Part No.	IRF430
Description	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) 三极管N -通道（减振钢板基本\u003d 500V及的Rds（on）\u003d 1.5ohm，身份证\u003d 4.5A TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
File Size	145.13K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC20KDS IRG4BC20KD-S IRG4BC20KD-STRL IRG4BC20KD-STRR
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600V电压的Vce（on）典\u003d 2.27V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
File Size	220.90K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFB31N20D IRFS31N20DTRL
Description	Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 31A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|1A条（丁）\|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
File Size	192.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFBC30A
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
File Size	99.53K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
Description	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 18A I(C) \| TO-263AB 晶体管\| IGBT的\|正陈\| 600V的五（巴西）国际消费电子展\| 18A条一（c）\|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条） INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
File Size	150.68K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFY9240CM IRFY9240
Description	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) 功率MOSFET P沟道（BVdss \u003d-00V，的Rds（on）\u003d 0.51ohm，身份证\u003d-输出高达9.4A POWER MOSFET P-CHANNEL(BVdss=-200V Rds(on)=0.51ohm Id=-9.4A)
File Size	232.18K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFI840G
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 0.85ohm，身份证\u003d 4.6a进入 Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=4.6A) HEXFET? Power MOSFET
File Size	168.25K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP460AS
Description	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）最大值\u003d 0.27ohm，身份证\u003d 20A条） Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A) 500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package
File Size	114.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP3415
Description	Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) 功率MOSFET（减振钢板基本\u003d 150伏，的Rdson）\u003d 0.042ohm，身份证\u003d 43A章） HEXFET? Power MOSFET Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.08K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP3710
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0.025W，身份证\u003d 57A条） HEXFET? Power MOSFET Power MOSFET(Vdss=100V Rds(on)=0.025W Id=57A)
File Size	181.20K / 8 Page	View it Online	Download Datasheet

For u003d Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |