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IRF[International Rectifier]
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Part No. |
IRGB5B120KD
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OCR Text |
...800
Energy (J)
1000
EON
swiching Time (ns)
tdOFF
100
600 400 200 0 0 4 8 IC (A)
EOFF
tF tR
12 16 20
10 4 6 8 10 12 14
tdON
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=3.7mH; VCE= 600V RG= 50; VGE= 1... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
222.92K /
12 Page |
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IRF[International Rectifier]
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Part No. |
IRGI4061DPBF
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OCR Text |
...
IRGI4061DPbF
700 600 EOFF
swiching Time (ns)
1000
500
Energy (J)
tdOFF
100
400 300 200 100 0 0 4 8 12 I C (A) 16 20 24 EON
tF tdON
10
tR
1 0 4 8 12 16 20 24
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
285.15K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDLL4151
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OCR Text |
...s high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is indicated by the ... |
Description |
High Conductance Fast Diode Small Signal Diode
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File Size |
18.70K /
2 Page |
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SANREX[SanRex Corporation]
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Part No. |
FBA75CA45
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OCR Text |
swiching applications of high voltage and current. 2 devices are serial connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 75A, VDSS 500V Suitable for high sp... |
Description |
MOSFET MODULE
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File Size |
111.98K /
3 Page |
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NEC[NEC]
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Part No. |
2SK2275
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OCR Text |
...iss td (on), tr, td (off), tf - swiching Time - ns
VGS = 10 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 200 100 td (off) tr tf td (on) 10 VGS = 10 V0 RG = 10 VDD = 150 V 10
10 000 Ciss, Co... |
Description |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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File Size |
93.01K /
8 Page |
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it Online |
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NEC, Corp. NEC[NEC]
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Part No. |
2SD1843 2SD1843-T
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OCR Text |
...Sheet D16200EJ1V0DS
2SD1843
swiching TIME (ton, tstg, tf) TEST CIRCUIT
Data Sheet D16200EJ1V0DS
3
2SD1843
* The information in this document is current as of July, 2001. The information is subject to change without notice. F... |
Description |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管(达林顿接线)低频功率放大器和低速开 Low-freq. power amp., low-speed switching power tr.
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File Size |
73.91K /
4 Page |
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it Online |
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