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				MACOM[Tyco Electronics]
Part No.	AM42-0040
OCR Text	... - 6.4 GHz Features * * * * * High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50 Input/Output Broadband Matched High Performance Ceramic Bolt Down Package CR-15 Descriptio...
Description	GaAs MMIC VSAT Power Amplifier/ 2W 5.9 - 6.4 GHz GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz
File Size	40.05K / 4 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics]
Part No.	AM50-0002 AM50-0002RTR AM50-0002SMB AM50-0002TR AM500002
OCR Text	High Gain: 27 dB Low Power Consumption: 3 to 5 V, 20 mA High Dynamic Range Low Cost SOIC 8 Plastic Package Description M/A-COM's AM50-00...GHz Parameter Gain Noise Figure Input VSWR Output VSWR Output1 dB Compression Input IP3 Reverse Iso...
Description	1.575 GHz, low noise amplifier Low Noise Amplifier 1.575 GHz Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:25-35 RoHS Compliant: No LJT 128C 128#22 PIN RECP Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
File Size	127.56K / 3 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics] MA-Com
Part No.	AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM500006V2 AM500006 AM50-0006V2
OCR Text	....00 Low Noise Figure: 1.6 dB High Input IP3: -6 dBm at 3 V, 6.5 mA bias High Gain: 18 dB Single Supply: +3 to +8 VDC Low Cost SOT-26 Mini...GHz) F r e q u e n c y (G H z ) NOISE FIGURE vs. FREQUENCY (Bias = 3V, 6.5mA) 2.5 VSWR vs....
Description	1400-2000 MHz, low noise amplifier Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No Low Noise Amplifier 1400 - 2000 MHz 1400-1520 MHz, low noise amplifier
File Size	354.04K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFC38V586711
OCR Text	...tal-ceramic package guarantees high reliability. features class a operation internally matched to 50(ohm) system ? high output po...ghz band / 6w publication date : apr., 2011 2 mgfc38v5867 typical characteristics ( ta=25deg...
Description	C band internally matched power GaAs FET
File Size	104.65K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	... Bias: VDS = 2 V, IDS = 25 mA * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P1 dB at 4 GHz chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise ampl...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	... Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and Reel Packaging Option Available [1] Description T...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	... Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-And-Reel Packaging Option Available [1] Description Th...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	High Associated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel ...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization sy...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1] Description The ATF-13336 is a high performa...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

For high-ghz Found Datasheets File :: 24343 Search Time::2.313ms
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