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e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095 Search Time::2.813ms
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				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTW33N10E ON2695
OCR Text	E FET.TM Power Field Effect Transistor TO 247 with Isolated Mounting Hole MTW33N10E Motorola Preferred Device N-Channel Enhancement-M...AMPS) 70 60 8V 50 40 7V 30 20 10 0 0 1 2 3 4 5 6 7 8 9 6V 5V 10 TJ = 25C VGS = 10 V I D , DRAIN CURR...
Description	TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
File Size	227.85K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTY25N60E MTY25N60E_D ON2716
OCR Text	E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high ...AMPS) 40 VGS = 10 V 6V I D , DRAIN CURRENT (AMPS) 8V 5V 40 50 VDS 10 V 30 30 20 20 1...
Description	TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM From old datasheet system
File Size	236.67K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTY30N50E ON2718 MTY30N50E_D MTY30N50
OCR Text	E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high ...AMPS) 50 8V 40 30 20 10 4V 0 0 2 4 6 8 10 12 0 2 2.5 3 3.5 4 4.5 5 5V VGS = 10 V 6V I D , DRAIN CURR...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTMD2C02R2
OCR Text	...RJC). A power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less th...
Description	Power MOSFET 2 Amps / 20 Volts Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual
File Size	117.29K / 16 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP125N02R NTB125N02R NTB125N02RT4
OCR Text	... D2PAK CASE 418AA-01 ISSUE O C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 --- 0.100 BSC 0.018 0.02...
Description	Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK Power MOSFET 125 A 24 V N-Channel TO-220 D2PAK
File Size	68.88K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP35N15
OCR Text	...RJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the s...AMPS) VGS = 20 V SINGLE PULSE TC = 25C 700 600 500 400 300 200 100 0 25 50 75 100 125 TJ, STARTING J...
Description	Power MOSFET 37 Amps / 150 Volts Power MOSFET 37 Amps, 150 Volts
File Size	73.92K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D
OCR Text	...Transient Thermal Although many E-FETs can withstand the stress of Resistance-General Data and Its Use." drain-to-source avalanche at curren...AMPS) VGS = 20 V SINGLE PULSE TC = 25C 800 700 600 500 400 300 200 100 0 25 150 50 75 100 125 TJ, ST...
Description	Power MOSFET 52 Amps, 100 Volts Power MOSFET 52 Amps 100 Volts
File Size	72.62K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G
OCR Text	...qJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the s...AMPS) VGS = 20 V SINGLE PULSE TC = 25C EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ)...
Description	Power MOSFET 60 Amps, 60 Volts 60 V, 60 A, N-Channel TO-220 and D2PAK 60 V, 60 A, N−Channel TO−220 and D2PAK 60 V / 60 A / N&Channel TO&220 and D2PAK
File Size	85.70K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP85N03 NTB85N03 NTB85N03T4
OCR Text	...qJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less th...
Description	Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
File Size	80.80K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	TIP2955 TIP3055
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limit...
Description	POWER TRANSISTORS COMPLEMENTARY SILICON
File Size	104.33K / 4 Page	View it Online	Download Datasheet

For e-amps adc. Found Datasheets File :: 3095 Search Time::2.813ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |