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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N06S2-05 SPP100N06S2-05
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| OCR Text |
...lanche energy, single pulse
ID=80a, V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=100A, VDS=...30v, VGS =10V, ID =100A, RG =2.2
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27 53 130 5.4
35 80 170 -
nC
V(plateau) VDD =44V, ... |
| Description |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm
OptiMOS Power-Transistor
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| File Size |
312.35K /
8 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N06S2L-05 SPP100N06S2L-05
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| OCR Text |
...lanche energy, single pulse
ID=80a, V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=100A, VDS=...30v, VGS =4.5V, ID =100A, RG =1.3
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19 57 170 3.3
25 90 230 -
nC
V(plateau) VDD =44V,... |
| Description |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm
OptiMOS Power-Transistor
Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
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| File Size |
310.03K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03
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| OCR Text |
...tate resistance
V GS=4.5V, I D=80a V GS=4.5V, I D=80a, SMD version
Drain-source on-state resistance
V GS=10V, I D=80a V GS=10V, I D=80a, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID=... |
| Description |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 3mOhm, 100A, LL
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| File Size |
416.96K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03
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| OCR Text |
...lanche energy, single pulse
ID=80a, V DD=25V, RGS=25
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=100A...30v, VGS=0V, Tj=25C V DS=30v, VGS=0V, Tj=125C
A 0.01 1 1 1 100 100 nA m 2.5 2.2 3.3 3
Gate-sou... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 3.0mOhm, 100A, NL
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| File Size |
416.00K /
8 Page |
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it Online |
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FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
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| Part No. |
2SK3273-01MR
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| OCR Text |
...GS=0V f=1MHz VCC=30v VGS=10V ID=80a RGS=10 Tch=25C L = 100H IF=80a VGS=0V Tch=25C IF=50A VGS=0V -dIF/dt=100A/s Tch=25C ID=40A
Min. 60 2,5
Typ. 3,0 1,0 10,0 10 5,0 50 9000 1250 700 50 200 150 135 1,0 85 0,25
Max. 3,5 100,0 500,0 10... |
| Description |
N-channel MOS-FET
N-channel MOS-FET 70 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
140.24K /
2 Page |
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ST Microelectronics, Inc.
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| Part No. |
STRH80P6FSY3
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| OCR Text |
...by safe operating area 3. ISD < 80a, di/dt < 117A/s, VDD = 80%V(BR)DSS
Table 2.
Symbol
Thermal data
Parameter Value 0.5 0.21 48 Unit...30v, ID = 40A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain Min. Typ. 8500 1521 6... |
| Description |
P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET
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| File Size |
279.65K /
12 Page |
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it Online |
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Price and Availability
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