...A W C C
Solder Dip
4.0
7.50.2
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB948 2SB948A
(TC...
... 35 2 150 -55 to +150 Unit V
7.50.2
s Features
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB949 2SB949A 2SB949 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.0
1.40.1
1.30...
...2.70.2
4.20.2
Unit: mm
7.50.2
s Features
q q q
High foward current transfer ratio hFE High-speed switching Full-pack package...16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Coll...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...4.20.2
4.20.2
Unit: mm
7.50.2
s Features
q q q
4.0
High foward current transfer ratio hFE High-speed switching Full-pack ...16.70.3
3.10.1
1.40.1
1.30.2
14.00.5
Solder Dip
s Absolute Maximum Ratings
Parame...
Description
Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
...0
Collector to
16.70.3
7.50.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw...
Description
Silicon PNP epitaxial planar type(For power amplification)
...) ID*
1 2
Rating -120 -120 -7 -10 -15 10 50 150 -55 to +150
Unit V V V A A A W C C
PC * Tj
Tstg
Electrical Characteristics (...16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
15.0 0...
...
1.8
1.00.2
s Features
7.30.1
1.80.1
Unit A A A V V
-50 -40 50 220 -1 -1.5 150 45
VCE(sat) VBE(sat) fT Cob
V V MHz p...16 12 8 4 0 0 20 40 60 80 100 120 140 160
-3.0 -2.5
-30mA -25mA -20mA
-3
-1
-2.0 -15m...
... PC Tj Tstg
Ratings -15 -10 -7 -1 - 0.5 200 150 -55 ~ +150
Unit V V V A A mW C C
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:...16 - 0.8 130 22
*2
min
typ
0 to 0.1
0.1 to 0.3 0.40.2
0.8
max -100
0.16 -0.06
...