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Mitsubishi Electric Corporation
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| Part No. |
MGFC45V5964A
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| OCR Text |
6.4ghz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarante... |
| Description |
5.9-6.4ghz BAND 32W INTERNALLY MATCHD GaAs FET
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| File Size |
15.69K /
1 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
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| OCR Text |
...re range (3)
Min 8.4 14 16 8 6 39 38
Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350
Max 10.4
Unit GHz dB dB dB...4GHz
Ref. : DSCHA70102175 -24-June-02 3/7 Specifications subject to change without notice
Route ... |
| Description |
X-band GaInP HBT High Power Amplifier
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| File Size |
156.54K /
7 Page |
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Murata Electronics
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| Part No. |
XM0860SH-DL0612TMP
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| OCR Text |
6.0GHz
Applications
SPDT for General Purpose
Features
* Positive Voltage Control ....... +2.8V * Low Insertion Loss ............... 0.23dB@0.9GHz / 0.25dB@2.4GHz / 0.40dB@5.8GHz * High Isolation ..................... 24.5dB@0.9GHz / 2... |
| Description |
GaAs Very Small SPDT Switch
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| File Size |
239.88K /
6 Page |
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it Online |
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Maxim
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| Part No. |
MAX2645
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| OCR Text |
...15.2/-9.7
NF (dB) 2.3/15.5 2.6/16 2.6/16
IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+16.2
LOGIC INPUTS
GAIN STEP SHUTDOWN RBIAS
BIAS A...4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver MAX2645
ABSOLUTE MAXIMUM RATINGS
VCC to GND .... |
| Description |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system
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| File Size |
263.98K /
12 Page |
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it Online |
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HVVi Semiconductors, Inc.
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| Part No. |
HVV1214-075
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| OCR Text |
...,F=1200MHz,1400MHz 21 <0.6dB <0.6 dB P OUT=75W,F=1200MHz,1400MHz Pulse Droop OUT Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % dB D1 IRL Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB 1 PD 1 Pulse Droop P =75W,F=1200MHz,1400MHz <0.6 d... |
| Description |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
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| File Size |
478.51K /
2 Page |
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it Online |
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Price and Availability
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