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![HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D](Maker_logo/intersil_corporation.GIF)
Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D
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OCR Text |
20a, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-218AC
COLLECTOR (FLANGE) EMITTER COLLECTOR GATE
...10a, VCE = 10V IC = 10a, VCE = 10V IC = 20a, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = ... |
Description |
CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC 20a, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 20a/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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File Size |
35.49K /
6 Page |
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![HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST](Maker_logo/fairchild_semiconductor.GIF)
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
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OCR Text |
... junction temperature. 2. ICE = 20a, L = 400H, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
...10a, VGE = 15V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage ... |
Description |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
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File Size |
175.79K /
8 Page |
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![HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D
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OCR Text |
..., TURN OFF DELAY TIME (ns) IC = 20a, VGE = 10V, VCL = 300V L =25H, RG = 25
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
WOFF = IC * VCEdt...10a, VGE = 10V, VCL = 300V L = 50H, RG = 50
40E1/50E1 500 400 40C1/50C1 300 200 100 0 +25
500 ... |
Description |
10a 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10a/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10a, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220aB
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File Size |
36.64K /
6 Page |
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![HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1](Maker_logo/intersil_corporation.GIF)
Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1
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OCR Text |
20a, 400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EMITTER COLLECTOR COLLECTOR (FLANGE) GATE
Features
* 15A and 20...10a, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI ... |
Description |
15A, 20a, 400V and 500V N-Channel IGBTs 15 A, 500 V, N-CHANNEL IGBT, TO-220aB 15A 20a 400V and 500V N-Channel IGBTs 15A/ 20a/ 400V and 500V N-Channel IGBTs
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File Size |
35.19K /
5 Page |
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![IRFRU4105 IRFU4105 IRFR4105](Maker_logo/international_rectifier.GIF)
IRF[International Rectifier]
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Part No. |
IRFRU4105 IRFU4105 IRFR4105
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OCR Text |
...e; Package limitation current = 20a
ISD 16A, di/dt 420a/s, VDD V(BR)DSS,
TJ 175C
Uses IRFZ34N data and test conditions
** Wh...10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150 175
TC , Case Temperatur... |
Description |
Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?) HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?
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File Size |
140.69K /
10 Page |
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it Online |
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Price and Availability
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