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Epson Electronics
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| Part No. |
SED1355
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| OCR Text |
...Kx16 device. 2M bytes using one 1mx16 device. * Addressable as a single linear address space. CPU Interface * Supports the following interfaces: Hitachi SH-4. Hitachi SH-3. Motorola M68K. Philips MIPS PR31500/PR31700. Toshiba MIPS TX3912. M... |
| Description |
LCD Controller
From old datasheet system
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| File Size |
2,637.93K /
512 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KM416C1200C KM416V1200C KM416V1000C KM416C1000C
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| OCR Text |
...is available in L-version. This 1mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcompu... |
| Description |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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| File Size |
766.42K /
34 Page |
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ALSC[Alliance Semiconductor Corporation]
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| Part No. |
AS29LV160T AS29LV160 AS29LV160B
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| OCR Text |
1mx16 * Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K word sectors - Boot code sector architecture--T (top) or B (bottom) - Erase any combination of sectors or ... |
| Description |
3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
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| File Size |
253.15K /
29 Page |
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OKI ELECTRIC INDUSTRY CO LTD
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| Part No. |
MSC23V26418TD-XXBS8 MSC23V26418TD MSC23V26418TD-60BS8
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| OCR Text |
...which is composed of eight 16Mb(1mx16) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage mem... |
| Description |
2M X 64 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
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| File Size |
56.08K /
10 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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| OCR Text |
1mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Added Lead Free 48-FBGA-6.00x7.00 Product
Draft Date
October 6, 2003
Remark
Preliminary
November 25... |
| Description |
1mx16 bit Uni-Transistor Random Access Memory
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| File Size |
178.10K /
10 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S16161CA-I K1S16161CA DSK1S16161CA
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| OCR Text |
1mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
December 12, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electr... |
| Description |
1mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
184.67K /
10 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1S64CWXTJ
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| OCR Text |
...sists of four industry standard 1mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory... |
| Description |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
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| File Size |
683.46K /
45 Page |
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it Online |
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Price and Availability
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