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  100v 4a Datasheet PDF File

For 100v 4a Found Datasheets File :: 2087    Search Time::3.031ms    
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    Infineon
Part No. SKP02N120
OCR Text ... withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operating junction a...4a 6a 8a 10a 12a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc...
Description IGBTs & DuoPacks - 2A 1200V TO220AB IGBT Diode

File Size 376.02K  /  13 Page

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    IRF[International Rectifier]
Part No. IRHNJ8230 IRHNJ3230 IRHNJ4230 IRHNJ7230
OCR Text ...-20V VGS = 12V, ID = 9.4a VDS = 100v VDD = 100v, ID = 9.4a, RG = 7.5 VGS = 12V Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz V S( ) A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + L...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 125.98K  /  8 Page

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    ZXMP10A17KTC

Diodes Incorporated
Part No. ZXMP10A17KTC
OCR Text ...incorporated zxmp10a17k 100v p-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25 c -100v 350m @ v gs = -10v -3.9a 450m @ v gs = -6.0v -3.4a description and applications this mos...
Description 100v P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 672.15K  /  8 Page

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    FRS230D FRS230H FRS230R FN3224

Intersil Corporation
Part No. FRS230D FRS230H FRS230R FN3224
OCR Text ...ncement types with ratings from 100v to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and...4a VDD = 100v, ID = 7A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 200...
Description 7A, 200V, 0.515 OHM, RAD HARD, N-CHANNEL POWER MOSFETS
7A/ 200V/ 0.515 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system

File Size 48.18K  /  6 Page

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    TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
Part No. BDS12 BDS12SMD BDS10SMD BDS11SMD BDS11 BDS10
OCR Text ...ture 60V 60V BDS11 BDS12 80V 100v 80V 100v 5V 15A 5A 90W -65 to 200C 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: ...4a VCC = 30V IB1 = 0.4a IC = 4a VCC = 30V IB1 = -IB2 = 0.4a Max. 0.7 1.0 0.8 Unit ms ms ms ...
Description SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB

File Size 19.72K  /  2 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRS9230R FRS9230D FRS9230H
OCR Text ...ncement types with ratings from 100v to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and...4a, VGD = 0 I = 4a; di/dt = 100A/s VDD = -100v, ID = 4a IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS =...
Description 4a, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs 4 A, 200 V, 1.32 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
4a/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

File Size 48.90K  /  6 Page

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    IRF7350 IRF7350N IRF7350P IRF7350TR

IRF[International Rectifier]
Part No. IRF7350 IRF7350N IRF7350P IRF7350TR
OCR Text ...T 1 8 2 7 D1 D1 N-Ch VDSS 100v P-Ch -100v 3 6 D2 D2 4 5 P -C H A N N E L M O S F E T RDS(on) 0.21 0.48 T...4a, VGS = 0V -- 72 110 ns N-Channel -- 77 120 TJ = 25C, IF = 1.8A, di/dt = 100A/s -- 205 310 nC P-C...
Description -100v Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
100v Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -100v)

File Size 235.93K  /  16 Page

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    IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2N7381 JANSG2N7381 JANSH2N7381 JANSR2N7381

IRF[International Rectifier]
Part No. IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2N7381 JANSG2N7381 JANSH2N7381 JANSR2N7381
OCR Text ...= -20V VGS =12V, ID =9.4a VDS = 100v VDD = 100v, ID =9.4a VGS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gat...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package

File Size 102.98K  /  8 Page

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    BDS13SMD BDS13SMD05 BDS1307 BDS14SMD05

Seme LAB
Part No. BDS13SMD BDS13SMD05 BDS1307 BDS14SMD05
OCR Text ...ction temperature - 60v - 80v - 100v - 60v - 80v - 100v - 5v - 15a - 5a 43.75w ?65 to 200c 200c mechanical data dimensions in mm(inches) 16....4a v cc = - 30v i b1 = - 0.4a i c = - 4a v cc = - 30v i b1 = ?i b2 = 0.4a 0.7 1.0 0.8 s ...
Description SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES

File Size 34.66K  /  2 Page

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    Monolithic Power System...
Part No. MP18024HN
OCR Text 100v, 4a, high frequency half-bridge gate driver mp18024 rev. 1.0 www.monolithicpower.com 1 6/3/2011 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohibited. ? 2011 mps. all rights r...
Description 100v, 4a, High Frequency Half-Bridge Gate Driver

File Size 399.37K  /  12 Page

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For 100v 4a Found Datasheets File :: 2087    Search Time::3.031ms    
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