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NEC Corp.
NEC[NEC]
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| Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
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| OCR Text |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-st... |
| Description |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
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| File Size |
71.11K /
8 Page |
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NEC, Corp.
NEC[NEC]
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| Part No. |
2SJ624 2SJ624-T1B 2SJ624-T2B
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| OCR Text |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-st... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
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| File Size |
69.46K /
8 Page |
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NEC[NEC]
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| Part No. |
2SJ625 2SJ625-T1B 2SJ625-T2B
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| OCR Text |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-st... |
| Description |
Pch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
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| File Size |
64.29K /
8 Page |
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NEC, Corp.
NEC[NEC]
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| Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
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| OCR Text |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-sta... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
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| File Size |
63.69K /
8 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ628
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| OCR Text |
Ordering number : ENN7271
2SJ628
P-Channel Silicon MOSFET
2SJ628
Ultrahigh-Speed Switching Applications
Preliminary Features
* * *
Package Dimensions
unit : mm 2062A
[2SJ628]
4.5 1.6 1.5
Low ON-resistance. Ultrahigh-speed... |
| Description |
Ultrahigh-Speed Switching Applications
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| File Size |
30.69K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ630
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| OCR Text |
Ordering number : ENA0489
2SJ630
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ630
Features
* * *
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
... |
| Description |
General-Purpose Switching Device Applications
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| File Size |
34.56K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ633
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| OCR Text |
2SJ633
No.
2SJ633
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0.85 0.7
0.85
0.5
0.6
1.2 0 0.2
1
... |
| Description |
2SJ633
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| File Size |
57.51K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ636
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| OCR Text |
2SJ636
No.
2SJ636
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0.85 0.7
0.85
0.5
0.6
1.2 0 0.2
1
... |
| Description |
2SJ636
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| File Size |
54.58K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ656
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| OCR Text |
Ordering number : ENN7684
2SJ656
P-Channl Silicon MOSFET
2SJ656
General-Purpose Switching Device
Features
* * * *
Package Dimensions
unit : mm 2063A
[2SJ656]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching.... |
| Description |
High Output MOSFETs
General-Purpose Switching Device
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| File Size |
30.46K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ657
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| OCR Text |
Ordering number : ENN7685
2SJ657
P-Channl Silicon MOSFET
2SJ657
General-Purpose Switching Device
Features
* * * *
Package Dimensions
unit : mm 2063A
[2SJ657]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching.... |
| Description |
General-Purpose Switching Device
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| File Size |
31.12K /
4 Page |
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Price and Availability
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