| |
|
 |
NEC[NEC]
|
| Part No. |
2SJ625 2SJ625-T1B 2SJ625-T2B
|
| OCR Text |
...
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
3
1.5
0 to 0.1
1 2
FEATURES
* 1.8 V drive available * Low on-state resistance RDS(on)1 = 113 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(o... |
| Description |
Pch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
| File Size |
64.29K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
|
| OCR Text |
...h can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING... |
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
63.69K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ628
|
| OCR Text |
...speed switching. 1.8V drive.
0.5 3 1.5 2 3.0
(Bottom view)
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Vo... |
| Description |
Ultrahigh-Speed Switching Applications
|
| File Size |
30.69K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ630
|
| OCR Text |
...nted on a ceramic board (600mm2!0.8mm) Tc=25C Conditions Ratings --12 8 --6 --24 1.5 3.5 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Curr... |
| Description |
General-Purpose Switching Device Applications
|
| File Size |
34.56K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ633
|
| OCR Text |
0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0.85 0.7
0.85
0.5
0.6
1.2 0 0.2
1
2
3
2.3 2.3
2.3
2.3
1.2
2S... |
| Description |
2SJ633
|
| File Size |
57.51K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ636
|
| OCR Text |
0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0.85 0.7
0.85
0.5
0.6
1.2 0 0.2
1
2
3
2.3 2.3
2.3
2.3
1.2
2S... |
| Description |
2SJ636
|
| File Size |
54.58K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ656
|
| OCR Text |
...
unit : mm 2063A
[2SJ656]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75
2.4 0.7
2.55
123 2.55
2.4
1 : G... |
| Description |
High Output MOSFETs
General-Purpose Switching Device
|
| File Size |
30.46K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
2SJ657
|
| OCR Text |
...
unit : mm 2063A
[2SJ657]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75
2.4 0.7
2.55
123 2.55
2.4
Speci... |
| Description |
General-Purpose Switching Device
|
| File Size |
31.12K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
|
| Part No. |
2SK1215 2SK1215D
|
| OCR Text |
... I GSS I DSS*
1
Min 20 -- 4 0 8 -- -- -- 24 -- F IGF 8 to 12
Typ -- -- -- -- 14 2.5 1.6 0.03 -- --
Max -- 20 12 -2.0 -- -- -- -- -- 3
Unit V nA mA V mS pF pF pF dB dB
Test conditions I D = 100 A, VGS = -4 V VGS = 5 V, VDS = ... |
| Description |
Silicon N-Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N Channel MOS FETs
|
| File Size |
22.41K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
2SK1359
|
| OCR Text |
...Enhancement-mode : RDS (ON) = 3.0 (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm
: IDSS = 300 A (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage... |
| Description |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
| File Size |
386.65K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
