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For w ferrite Found Datasheets File :: 4688 Search Time::2.375ms
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				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MMFT3055EL
OCR Text	... Solder Bath RJA TL 156 260 5 C/w C Sec (1) Power rating when mounted on FR-4 glass epoxy printed circuit board using recommended footpri...ferrite BEAD 47 k Vin 15 V 2N3904 100 k 47 k 5V 100 k 2N3904 100 DUT Vin = 15 V...
Description	MEDIUM POwER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
File Size	236.40K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMFT3055E
OCR Text	...Solder Bath RJA TL 156 260 10 C/w C Sec (1) Power rating when mounted on FR-4 glass epoxy printed circuit board using recommended footpri...ferrite BEAD 47 k Vin 15 V 2N3904 100 k 47 k 10 V 100 k 2N3904 100 DUT Vin = 15...
Description	MEDIUM POwER TMOS FET 1.7 AMP 60 VOLTS
File Size	238.13K / 10 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	...ic Gain (VDD = 28 V, POUT = 10 w, IDQ = 360 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 w, IDQ = 360 mA, f = 1....ferrite Bead K 1206 SMT K 1206 SMT SMT Pot K 1206 SMT K 1206 SMt .028" Dielectric Thickness, er = 4....
Description	30 watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	...tic Gain (VDD = 26 V, POUT = 3 w, IDQ = 155 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 155 mA, f = 1.99 GH...ferrite, 6 mm Phillips 53/3/4.6-452 4 Turns, 22 AwG, .120 DIA I.D. Inductor, 22 AwG Buss wire Resist...
Description	12 watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10122
OCR Text	...ic Gain (VDD = 28 V, POUT = 15 w, IDQ = 600 mA, f = 2.11 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz) Dra...ferrite Bead R1, R2 220 w Chip Resistor Digi-Key 2.2 QBK Circuit Board -- Dielectric Thickness = 0.0...
Description	50 watts wCDMA, 2.1.2 GHz GOLDMOS Field Effect Transistor 50 watts wCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor 50 watts wCDMA 2.1-2.2 GHz GOLDMOS Field Effect Transistor
File Size	262.20K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10134
OCR Text	...ic Gain (VDD = 28 V, POUT = 30 w, IDQ = 1.3 A Total, f = 2.17 GHz) Power Output at 1.5 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 2...ferrite Bead, 4mm TMM4, er 6.0, THICKNESS 0.30", 2 OZ COPPER 5 PTF 10134 e Assembly Diag...
Description	100 watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 100 watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
File Size	317.17K / 7 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola Inc]
Part No.	MC1350 MC1350D MC1350P
OCR Text	...3 ferrite Core 14 Turns 28 S.w.G. 5-25 pF 5-25 pF 5-25 pF 45 MHz L1 T1 C1 C2 0.4 H 1.3 H to 3.4 H Q 100 Q 100 @ 2.0 H 50 pF to160 pF 8.0 pF to 60 pF 0.3 H 1.2 H to 3.8 H 58 MHz Q 100 Q 100 @ 2.0 H 8.0 pF to 60 pF 3.0 pF to 35 p...
Description	IF AMPLIFIER
File Size	159.76K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF9120R3 MRF9120LR3 MRF9120
OCR Text	...9120R3 MRF9120LR3 880 MHz, 120 w, 26 V LATERAL N - CHANNEL RF POwER MOSFETs Freescale Semiconductor, Inc. CASE 375B - 04, STYLE 1 NI ...ferrite Beads, Surface Mount Short ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.8 - ...
Description	RF Power Field Effect Transistors
File Size	311.87K / 12 Page	View it Online	Download Datasheet

For w ferrite Found Datasheets File :: 4688 Search Time::2.375ms
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