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| Part No. |
PG05DXTE6
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| OCR Text |
...cations. features 30 watts peak pulse power (tp=8/20 )s transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) small package for use in portable electronics. suitable replacement for multi-layer varistors in esd ... |
| Description |
30 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
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| File Size |
44.88K /
2 Page |
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FreesCale
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| Part No. |
MC4822
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| OCR Text |
...ounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol limit units v ds 30 v gs 20 t a =25 o c10 t a =70 o c8.2 i dm 50 i s 2.3 a t a =25 o c2.1 t a =70 o c1.3 t j , t stg -55 to 150 o c c... |
| Description |
Dual N-Channel 30-V (D-S) MOSFET
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| File Size |
321.86K /
6 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
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| Part No. |
IRF1404L IRF1404S
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| OCR Text |
...urce voltage 20 v e as single pulse avalanche energy ? 519 mj i ar avalanche current ? 95 a e ar repetitive avalanche energy ? 20 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to +175 t stg storage tempera... |
| Description |
HEXFET? Power MOSFET
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| File Size |
3,989.19K /
10 Page |
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it Online |
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TOSHIBA
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| Part No. |
GT50J328
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| OCR Text |
...a * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. 100 0 10 common emitter v ge = 0 f = 1mhz t c = 25c 10 1 100 1000 100 1000 10000 0.1 10 dc o p e r ation 10m... |
| Description |
Discrete IGBT
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| File Size |
240.83K /
6 Page |
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it Online |
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Price and Availability
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