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				Toshiba Semiconductor
Part No.	TPCF830107 TPCF8301
OCR Text	...exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device 25.4 FR-4 25.4 x 25.4 x 0.8 (u...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
File Size	190.53K / 7 Page	View it Online	Download Datasheet

				VISHAY SEMICONDUCTORS
Part No.	PTV30B-E3/85A
OCR Text	...notes cathode end notes: (1) mounted on p.c.b. with 5.0 mm x 5.0 mm copper pads attached to each terminal (2) mounted on minimum recommended pad layout (3) pulse test: 300 s pulse width, 1 % duty circle primary characteristics v z 3.9 ...
Description	32 V, 0.6 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-220AA
File Size	93.48K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMZ600UNE
OCR Text	...mall dfn1006-3 (sot883) surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? trench mosfet technology ? leadless ultra small smd plastic package: 1.0 0.6 0.48 mm ? electrostatic discharge...
Description	20 V, N-channel Trench MOSFET
File Size	232.41K / 15 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCF8201 TPCF820107
OCR Text	...exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The powe...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
File Size	227.20K / 7 Page	View it Online	Download Datasheet


Part No.	SSM5G09TU
OCR Text	... (note 3) ? 40~85 c note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and ma...
Description	1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	270.69K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCF8104 TPCF810407
OCR Text	... exceed 150. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (init...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS? TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
File Size	222.72K / 7 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD. Silikron Semiconductor ...
Part No.	SSF80100
OCR Text	... /w junction-to-ambient (pcb mounted, steady-state) ? 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown vol...
Description	Advanced MOSFET process technology
File Size	436.21K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCF810307 TPCF8103
OCR Text	... below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -16 V, Tch = 25C (init...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
File Size	259.00K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCF810207 TPCF8102
OCR Text	...eed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) (a) (b) Note 3: VDD = -16 V, Tch = 25C (i...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
File Size	206.95K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCF8101 TPCF810107
OCR Text	...eed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) (a) (b) Note 3: VDD = -10 V, Tch = 25C (i...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
File Size	207.40K / 7 Page	View it Online	Download Datasheet

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