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  e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095    Search Time::3.297ms    
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    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS power FET is designe...AMPS) TJ = 25C VGS = 10 V 8V 6V 4V 60 3.5 V 100 5V I D , DRAIN CURRENT (AMPS) 4.5 V 80 VDS 10 V TJ ...
Description TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

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    MTP52N06VL MTP52N06VL_D ON2624 ON2623

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text ... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) VGS = 10 V 8V 90 7V 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLT...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 162.64K  /  8 Page

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    MTP52N06V MTP52N06V_D ON2625 ON2622

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text ... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5V 6V...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
From old datasheet system

File Size 159.45K  /  8 Page

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    MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withst...AMPS) 50 40 30 20 10 VGS = 4.0 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN-TO-SOURCE VO...
Description From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

File Size 139.95K  /  6 Page

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    MTP5N40E ON2629

Fairchild Semiconductor
Motorola, Inc
Part No. MTP5N40E ON2629
OCR Text E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high...AMPS) 8 VGS = 10 V 7V 6V 1.2 VDS = VGS ID = 0.25 mA 1.1 6 1 4 5V 0.9 2 4V 0 ...
Description From old datasheet system
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

File Size 258.42K  /  8 Page

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    MTP60N06 MTP60N06HD MTP60N06HD_D ON2633

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS power FET is designe...AMPS) 100 9V 80 60 40 20 0 5V TJ = 25C 6V 120 8V 7V I D , DRAIN CURRENT (AMPS) 100 80 60 40 20 0 2.0...
Description From old datasheet system
TMOS POWER FET 60 AMPERES 50 VOLTS
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

File Size 216.88K  /  8 Page

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    MTP6N60E

MOTOROLA[Motorola, Inc]
Part No. MTP6N60E
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination schem...AMPS) 10 8V 8 6 5V 4 2 4V 0 0 2 6 10 14 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 18 0 2.0 2.5 ...
Description TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

File Size 153.44K  /  8 Page

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    MTP8N06 MTP8N06E

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP8N06 MTP8N06E
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high ener...AMPS) 12 VGS = 10 V 9V 8V 6V 7V I D , DRAIN CURRENT (AMPS) 16 VDS 10 V TJ = - 55C 12 100C 8 25C ...
Description TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

File Size 212.56K  /  8 Page

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    MTP8N50E MTP8N50E_D ON2651 ON2650

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination schem...AMPS) 8V 12 6V VGS = 10 V 7V I D, DRAIN CURRENT (AMPS) 16 14 12 10 8.0 100C 6.0 25C 4.0 TJ = -55C 2....
Description From old datasheet system
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

File Size 154.26K  /  6 Page

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    MTSF1P02HD ON2655

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTSF1P02HD ON2655
OCR Text ...RJC). A power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the s...AMPS) VGS = 8 V SINGLE PULSE TC = 25C 1 ms 10 ms 1 dc 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ...
Description SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system

File Size 342.01K  /  12 Page

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For e-amps adc. Found Datasheets File :: 3095    Search Time::3.297ms    
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