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charge-to-time Datasheet PDF File

For charge-to-time Found Datasheets File :: 69171 Search Time::3.234ms
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				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...urce Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitanc...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...urce Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacit...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...urce Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitanc...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Sour...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...VALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND ...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...VALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERA...TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...urce Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacit...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...oltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay tim...to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...urce Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Imput Capacitance Coss Output Capaci...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...rce Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance IGSS Qgsync Qgcont Qg...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

For charge-to-time Found Datasheets File :: 69171 Search Time::3.234ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |