...
VDSS = -30V
3
6
4
5
RDS(on) = 0.020
Description
These P-channel HEXFET(R) Power MOSFETs from International Rectifier ut...08
0.08
0.06
0.06
VGS= - 4.5V
0.04
0.04
Id = -8.0A
0.02
0.02
VGS = -10V
...
Description
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROUD, PRIVACY; RoHS Compliant: Yes
... Unit Load Operates from Single 5.0 V Supply Lower Power Requirements Plug-In Replacement for MC3486
16 1 16 1
N SUFFIX PLASTIC PACKAGE ...08 ISSUE R B
1 8
-A-
16 9
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. C...
Description
From old datasheet system QUAD EIA-485 LINE RECEIVER WITH THREE-STATE OUTPUTS
...ate Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5816 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) BSC
050-5816 Rev B
Dimensions in Millimeters and (Inches)
APT's devices are covered...
Description
POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
...26HVR UNIT Volts Amps
500 18.5 74 30 40 200 1.6 -55 to 150 300 18.5 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC
050-5820 Rev B
Dimensions in Millimeters and (Inches)
APT's devices are covered...
Description
POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
...58HVR UNIT Volts Amps
800 13.5 54 30 40 250 2.0 -55 to 150 300 13.5 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC
050-5815 Rev A
Dimensions in Millimeters and (Inches)
APT's devices are covered...
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
...67HVR UNIT Volts Amps
800 11.5 46 30 40 200 1.6 -55 to 150 300 11.5 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC
050-5818 Rev B
Dimensions in Millimeters and (Inches)
APT's devices are covered...
Description
POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
...ate Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5632 Rev -
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description
POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
...ate Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5608 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm