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GSI Technology, Inc.
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| Part No. |
GS4576S18GL-24IT GS4576S18GL-24T GS4576S18L-18T
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| OCR Text |
32m x 18 576mb sio low latency dram (lldram tm ) ii 533 mhz ? 300 mhz 2.5 v v ext 1.8 v v dd 1.5 v or 1.8 v v ddq 144-ball bga commerci...bit input data bus. during write commands, the data is sampled at both edges of dk. dk, dk input ... |
| Description |
DDR DRAM, PBGA144 ROHS COMPLIANT, UBGA-144
DDR DRAM, PBGA144 UBGA-144
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| File Size |
2,462.90K /
64 Page |
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it Online |
Download Datasheet
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RENESA
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| Part No. |
M6MGD967W3
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| OCR Text |
...ntents 96M-bit Flash memory and 32m-bit Mobile RAM in a 52-pin TSOP. 96M-bit Flash memory is constructed by 64M-bit Flash Memory and 32m-bit Flash Memory. They are single power supply and high performance non-volatile memory. All memory blo... |
| Description |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
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| File Size |
52.26K /
3 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR-7.5 HYS72V32300GR-7.5 HYS72V16301GR-7.5 HYS72V128320GR-7.5
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| OCR Text |
...s (dimms) organized as 16m 72, 32m x 72, 64m 72 and 128m 72 high speed memory arrays designed with synchronous drams (sdrams) for ecc app...bit) v cc v ss c d0-d17, reg., dll d0-d17, reg., dll 1) dq wirding may differ from that decribed ... |
| Description |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
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| File Size |
231.38K /
19 Page |
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it Online |
Download Datasheet |
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Price and Availability
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