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				NXP Semiconductors Philips Semiconductors
Part No.	BLF2022-30
OCR Text	30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES * Typical W-CDMA performance at a supply voltage of 2...
Description	UHF power LDMOS transistor
File Size	100.68K / 12 Page	View it Online	Download Datasheet

				http:// ONSEMI[ON Semiconductor]
Part No.	MC33275DT-3.0 MC33275DT-3.3RKG MC33275D-2.5G MC33275D-3.3G MC33275D-5.0R2G MC33275DT-2.5G MC33275DT-2.5RKG MC33275D-2.5R2G MC3327505 MC33275D-2.5 MC33275D-3.0 MC33275D-3.0G MC33275D-3.0R2G MC33275D-3.3 MC33275D-3.3R2G MC33275D-5.0 MC33275D-5.0G MC33275DT-2.5 MC33275DT-3.0G MC33275DT-3.0RKG MC33275DT-3.3 MC33275DT-3.3G MC33275DT-5.0 MC33275DT-5.0G MC33275DT-5.0RKG NCV33275ST-5.0T3G MC33275 MC33275D-2.5R2 MC33275D-3.0R2 MC33275D-3.3R2 MC33275D-5.0R2 MC33275DT-2.5RK MC33275DT-3.0RK MC33275DT-3.3RK MC33275DT-5.0RK MC33275MN-2.5R2G MC33275MN-3.0R2G MC33275MN-3.3R2G MC33275MN-5.0R2 MC33275MN-5.0R2G MC33275ST-2.5T3 MC33275ST-2.5T3G MC33275ST-3.0T3 MC33275ST-3.0T3G MC33275ST-3.3T3 MC33275ST-3.3T3G MC33275ST-5.0T3 MC33275ST-5.0T3G NCV33275 NCV33275ST-5.0T3
OCR Text	... 500 - dB mVrms - - 2.50 3.00 3.30 5.00 - - - - 2.0 5.0 2.525 3.030 3.333 5.05 2.550 3.060 3.366 5.100 10 25 mV mV mV Min Typ Max Unit Vdc ...W) PD, MAXIMUM POWER DISSIPATION (W) PD, MAXIMUM POWER DISSIPATION (W) 10 15 20 25 L, LENGTH OF C...
Description	300 MA, LOW DROPOUT VOLTAGE REGULATOR
File Size	165.04K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPD25N06S4L-30
OCR Text	30 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 30 25 PG-TO252-3-11 V m A Features * N-channel - Enhancem...W C - Unit A Rev. 1.0 page 1 2009-03-23 IPD25N06S4L-30 Parameter Symbol Conditi...
Description	OptiMOS-T2 Power-Transistor
File Size	165.70K / 9 Page	View it Online	Download Datasheet

				Maxwell Technologies, Inc
Part No.	89LV1632RPQK-30
OCR Text	...yp m ax u nits read cycle time -30 t rc 9, 10, 11 30 -- -- ns address access time -30 t aa 9, 10, 11 -- -- 30 ns chip select to output -30 t...w rite c ycle (v cc = 3.3+ 10%, t a = -55 to +125 c, unless otherwise noted ) p aramete...
Description	16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
File Size	194.79K / 11 Page	View it Online	Download Datasheet

				MCC
Part No.	RB551V-30
OCR Text	30 schottky barrier diode 30 volts features ? high current rectifier schottky diode ? low voltage, low inductance ? for power supply ...w i t ho u t f u r t h e r no t i c e t o a n y p r o d u c t h e r e i n t o m a k e...
Description	Schottky Barrier Diode
File Size	211.95K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLM6G22-30 BLM6G22-30G
OCR Text	30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 -- 21 November 2008 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100...
Description	W-CDMA 2100 MHz to 2200 MHz power MMIC
File Size	86.65K / 12 Page	View it Online	Download Datasheet

				EPIGAP optoelectronic GmbH
Part No.	EPD-1300-0-3.0
OCR Text	... Unit V V 5 800 680 0.9 5 15 30 5.2x10-14 5.1x10 1000 15 12 Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300...W 30 nA M W/ Hz cm Hz W -1 1300 pF A measured on bare chip for information only...
Description	Photodiode
File Size	51.17K / 2 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	NES2527B-30
OCR Text	30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize perf...
Description	30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
File Size	36.06K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NES1823P-30
OCR Text	30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of deliverin...
Description	30 W L-S BAND PUSH-PULL POWER GaAs MES FET
File Size	49.90K / 8 Page	View it Online	Download Datasheet

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