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				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	... VDSS = 75V G S RDS(on) = 0.0126 ID = 75a Description Specifically designed for automotive applications, this design of HEXFET(R) ...56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units a W W/C V mJ a mJ C...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220aB package aUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...2 2.52 2.52 2.52 2.52 2.52 2.52 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 SELFRES. FREQ. MIN. (MHz) 320 320 32...56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100...
Description	Inductors Epoxy Conformal Coated, axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE POW...56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRaIN DIODE RaTINGS aND CHaRaCTERISTICS ...
Description	N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530a
OCR Text	....) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530a BVDSS = 100 V RDS(on) = 0.11 ID = 14 a TO-220 1 2 3 1.Gate 2. Drain 3. So...56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operatin...
Description	N-CHaNNEL POWER MOSFET advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840aL IRF840aS IRF840aSTRR
OCR Text	...l VDSS 500V RDS(on) max 0.85 ID 8.0a Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, avalanc...56 Max. Units Conditions --- V VGS = 0V, ID = 250a --- V/C Reference to 25C, ID = 1ma 0.85 VGS =...
Description	TRaNSISTOR \| MOSFET \| N-CHaNNEL \| 500V V(BR)DSS \| 8a I(D) \| TO-263aB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8a条（丁）\|63aB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0a Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840a
OCR Text	...l VDSS 500V Rds(on) max 0.85 ID 8.0a TO-220aB G DS absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C ID...56 Max. Units Conditions --- S VDS = 50V, ID = 4.8a 38 ID = 8.0a 9.0 nC VDS = 400V 18 VGS = 10V, See...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	0.70 0.90 3.56 Dia. 3.81 10.41 10.67 P-CHaNNEL POWER MOSFET FOR HI-REL aPPLICaTIONS VDSS ID(cont) RDS(on) FEaTURES 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 -100V -9.3a W 0.31W 10.41 10.92 2.54 BSC 2.6...
Description	P-CHaNNEL POWER MOSFET FOR HI.REL aPPLICaTIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	... D VDSS = -100V RDS(on) = 0.20 G ID = -14a S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...56 3.8 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) Units a W W W/C V mJ a ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14a) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14a)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	... D VDSS = -100V RDS(on) = 0.20 G ID = -14a S Description Fifth Generation HEXFETs from International Rectifier utilize adva...56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units a ...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14a)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...56 1100 550 250 3.5 MaX -4 -25 -250 100 0.200 20 100 70 70 90 - UNITS V V a a a na S ns ns ns...
Description	19 a, 100 V, 0.2 ohm, P-CHaNNEL, Si, POWER, MOSFET, TO-220aB 19a, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 a, 100 V, 0.2 ohm, P-CHaNNEL, Si, POWER, MOSFET, TO-263aB 19a/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

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