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-13a Datasheet PDF File

For -13a Found Datasheets File :: 5386 Search Time::1.453ms
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				Commonwealth Industrial, Corp.
Part No.	APT13GP120B
OCR Text	... voltage (v ge = 15v, i c = 13a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v g...
Description	Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps\|Ultrafast IGBT Family 电压200伏室的Vceon）：3.6V的身份证（续）：一三安培\|超快IGBT的家
File Size	80.49K / 6 Page	View it Online	Download Datasheet

				Bourns, Inc.
Part No.	CE02-2A18-10PYS
OCR Text	...16 #12 #8 max.value/per contact 13a 23a 26a voltage rating ac (rms) 250v 350v 350v dc 350v 500v 500v dielectric withstanding voltage ac (rms), 1minute 1,000v 1,500v 1,5 00v contact resistance less than m 5m max. operating temperature 40 to ...
Description	MIL SERIES CONNECTOR, RECEPTACLE
File Size	310.24K / 8 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608
OCR Text	....5A VGS=10V RGS=10 VCC=100V ID=13A VGS=10V L=100H Tch=25C IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 131 11 770 110 5 12 2.6 22 6.1 21 8 5 1.10 0.15 0.88 Min. 200 3.0 Typ. Max. 5.0 25 250 100 1...
Description	N-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	120.72K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV13N60E
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 60 90 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 18 27 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	413.37K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV13N60ES
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 48 72 nc gate-source charge q gs - 16 24 gate-drain charge q gd - 16 24 gate-drain crossover charge q sw - 7 10.5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltag...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	475.40K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMP13N60E
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 60 90 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 18 27 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	415.37K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMI13N60E
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 60 90 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 18 27 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	419.42K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMC13N60E
OCR Text	...gate charge q g v cc =300v i d =13a v gs =10v - 60 90 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 18 27 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t c h =25c - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	418.52K / 5 Page	View it Online	Download Datasheet

				http://
Part No.	BSS110
OCR Text	...t high side switch. bss84: -0.13a, -50v. r ds(on ) = 10 w @ v gs = -5v. bss110: -0.17a, -50v. r ds(on ) = 10 w @ v gs = -10v voltage controlled p-channel small signal switch. high density cell design for low r ds(on) . high satura...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	285.16K / 10 Page	View it Online	Download Datasheet

				http:// Alpha & Omega Semiconductors
Part No.	AON7900
OCR Text	... =10v, v ds =5v v gs =10v, i d =13a reverse transfer capacitance i f =13a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditi...
Description	30V Dual Asymmetric N-Channel MOSFET
File Size	346.50K / 10 Page	View it Online	Download Datasheet

For -13a Found Datasheets File :: 5386 Search Time::1.453ms
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