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Maxwell Technologies, Inc
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Part No. |
HSN-1000F HSN1000 HSN1000L HSN1000F
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OCR Text |
...e (operate-through): 1 x 10 12 rad(si)/sec total dose: 1 x 10 6 rad(si) neutron fluence: 5 x 10 13 n/cm 2 approximate detection ran...20 v 1,2,3 load current - standby 1 - operational 2 i l v l = 20v -- -- 100 2.25 a ma 1,2,3 pin d... |
Description |
Nuclear Event Detector
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File Size |
157.09K /
3 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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Part No. |
MSM5116800C-XXTS-K MSM5116800C-XXTS-L MSM5116800C-50TS-K
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OCR Text |
... rasp t rsh t cas t csh t rcd t rad t crp t asr t rah t asc t cah t ral t rcs t rch t rrh t oea t oez t ref t roh t rhcp output low impedanc...20 10 20 70 20 15 5 0 10 0 15 35 0 0 0 0 20 40 max. 70 20 35 40 20 50 10,000 100,000 10,00... |
Description |
2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器:快速页面模式型
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File Size |
449.76K /
16 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM5364005CSWG
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OCR Text |
... to column address delay time t rad 15 25 15 30 ns cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row ...20 25 ns 11 cas precharge time (hyper page cycle) t cp 8 10 ns ras pulse width (hyper page cycl... |
Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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File Size |
417.45K /
21 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM5364005BSWG
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OCR Text |
... to column address delay time t rad 15 25 15 30 ns cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row ...20 25 ns 11 cas precharge time (hyper page cycle) t cp 8 10 ns ras pulse width (hyper page cycl... |
Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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File Size |
389.50K /
19 Page |
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it Online |
Download Datasheet
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Price and Availability
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