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For h v Found Datasheets File :: 206196    Search Time::3.953ms    
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    TPCA8010-H TPCA8010-H09

Toshiba Semiconductor
Part No. TPCA8010-h TPCA8010-h09
OCR Text h TOShIBA Field Effect Transistor Silicon N-Channel MOS Type (MACh-MOS) TPCA8010-h high-Speed Switching Applications Switching Regulato...v (vDS = 10 v, ID = 1 mA) 5.00.2 S 1 4 0.60.1 4.250.2 Characteristic Drain-source vol...
Description high-Speed Switching Applications

File Size 210.13K  /  7 Page

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    TPCA8006-H TPCA8006-H06

Toshiba Semiconductor
Part No. TPCA8006-h TPCA8006-h06
OCR Text h TOShIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSvII) TPCA8006-h 0.50.1 Switching Regulator Applications Motor Driv...v) Enhancement mode: vth = 3.0 to 5.0 v (vDS = 10 v, ID = 1 mA) 5.00.2 0.05 S S 1 0.60.1 4 1.1...
Description Switching Regulator Applications

File Size 431.69K  /  7 Page

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    TPCA8005-H TPCA8005-H06

Toshiba Semiconductor
Part No. TPCA8005-h TPCA8005-h06
OCR Text h TOShIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-high-Speed U-MOSIII) TPCA8005-h high Efficiency DCDC Converter Appl...v) Enhancement mode: vth = 1.1 to 2.3 v (vDS = 10 v, ID = 1 mA) 0.150.05 1 5.00.2 0.950.05 ...
Description high Efficiency DC拢炉DC Converter Applications
high Efficiency DC/DC Converter Applications

File Size 437.16K  /  7 Page

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    TPCA8004-H TPCA8004-H06

Toshiba Semiconductor
Part No. TPCA8004-h TPCA8004-h06
OCR Text h TOShIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-high-Speed U-MOSIII) TPCA8004-h high Efficiency DCDC Converter Appl...v) Enhancement mode: vth = 1.1 to 2.3 v (vDS = 10 v, ID = 1 mA) 0.60.1 S 1 0.05 S 4 1.10.2 0.950.05...
Description high Efficiency DC拢炉DC Converter Applications
high Efficiency DC/DC Converter Applications

File Size 453.96K  /  7 Page

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    TPCA8003-H

Toshiba Semiconductor
Part No. TPCA8003-h
OCR Text h TOShIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-high-Speed U-MOSIII) TPCA8003-h high Efficiency DC/DC Converter App...v) Enhancement mode: vth = 1.1 to 2.3 v (vDS = 10 v, ID = 1 mA) 0.150.05 1 5.00.2 0.950.05 ...
Description high Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications

File Size 462.60K  /  7 Page

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    TOSHIBA
Part No. TPC6008-h
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpc6008-h tpc6008-h tpc6008-h tpc6008-h start of commercial production 2010-02 1. 1. 1. 1. ...v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v...
Description Power MOSFET (N-ch single vDSS≤30v)

File Size 227.71K  /  9 Page

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    HYMD212G726BLS4M-H HYMD212G726BLS4M-K HYMD212G726BLS4M-L HYMD212G726BLS4M-M HYMD212G726BS4M-H HYMD212G726BS4M-K HYMD212G

Hynix Semiconductor
Part No. hYMD212G726BLS4M-h hYMD212G726BLS4M-K hYMD212G726BLS4M-L hYMD212G726BLS4M-M hYMD212G726BS4M-h hYMD212G726BS4M-K hYMD212G726BS4M-L hYMD212G726BS4M-M hYMD212G726BS4M
OCR Text h/L Revision history Revision No. 0.1 history Defined Target Spec. Draft Date Dec. 2003 Remark This document is a general product descr...v v v mA W o C Sec Note : Operation at above absolute maximum rating can adversely affect de...
Description DDR SDRAM - Registered DIMM 1GB
Low Profile Registered DDR SDRAM DIMM

File Size 156.24K  /  17 Page

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    HYMD212G726ALS4M-H HYMD212G726ALS4M-K HYMD212G726ALS4M-L HYMD212G726ALS4M-M HYMD212G726AS4M-H HYMD212G726AS4M-K HYMD212G

Hynix Semiconductor
Part No. hYMD212G726ALS4M-h hYMD212G726ALS4M-K hYMD212G726ALS4M-L hYMD212G726ALS4M-M hYMD212G726AS4M-h hYMD212G726AS4M-K hYMD212G726AS4M-L hYMD212G726AS4M-M
OCR Text h/L DESCRIPTION Preliminary hynix hYMD212G726A(L)S4M-M/K/h/L series is Low Profile registered 184-pin double data rate Synchronous DRAM D...v v v mA W o C Sec Note : Operation at above absolute maximum rating can adversely affect de...
Description DDR SDRAM - Registered DIMM 1GB
Low Profile Registered DDR SDRAM DIMM

File Size 230.11K  /  16 Page

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    HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS4-L HYMD212G726ALS4-M HYMD212G726AS4-H HYMD212G726AS4-K HYMD212G726AS4

Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
Part No. hYMD212G726ALS4-h hYMD212G726ALS4-K hYMD212G726ALS4-L hYMD212G726ALS4-M hYMD212G726AS4-h hYMD212G726AS4-K hYMD212G726AS4-L hYMD212G726AS4-M hYMD212G726AS4
OCR Text h/L DESCRIPTION Preliminary hynix hYMD212G726A(L)S4-M/K/h/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line M...v v v mA W oC Sec Note : Operation at above absolute maximum rating can adversely affect dev...
Description 128Mx72|2.5v|M/K/h/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5v的| /升| x36 | DDR SDRAM内存-内存1GB的注
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184

File Size 261.69K  /  16 Page

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    TOSHIBA
Part No. TPC8227-h
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpc8227-h tpc8227-h tpc8227-h tpc8227-h start of commercial production 2012-05 1. 1. 1. 1. ...v ds = 40 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3...
Description Power MOSFET (N-ch dual)

File Size 258.71K  /  9 Page

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