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  gamma-voltage Datasheet PDF File

For gamma-voltage Found Datasheets File :: 1666    Search Time::1.765ms    
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    FRE160R FRE160D FN3258 FRE160H

INTERSIL[Intersil Corporation]
Part No. FRE160R FRE160D FN3258 FRE160H
OCR Text ...ults From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Pe...Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs
41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 48.25K  /  6 Page

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    FRE9160R FRE9160D FN3268 FRE9160H RE9160H

INTERSIL[Intersil Corporation]
Part No. FRE9160R FRE9160D FN3268 FRE9160H RE9160H
OCR Text ...ults From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Pe...Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 30 A, 100 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
From old datasheet system
30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
30A/ -100V/ 0.095 Ohm/ Rad Hard/ P-Channel Power MOSFETs

File Size 48.40K  /  6 Page

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    FRK160R FRK160D FRK160H FN3222

INTERSIL[Intersil Corporation]
Part No. FRK160R FRK160D FRK160H FN3222
OCR Text ...ults From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Pe...Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs
50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 48.08K  /  6 Page

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    FRK9160R FRK9160D FN3244 FRK9160H

INTERSIL[Intersil Corporation]
Part No. FRK9160R FRK9160D FN3244 FRK9160H
OCR Text ...ults From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Pe...Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 40A/ -100V/ 0.085 Ohm/ Rad Hard/ P-Channel Power MOSFETs
40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.27K  /  6 Page

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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text ...1, 3) (Notes 1, 3) 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effe...VOLTAGE (V) 500 Unless Otherwise Specified (Continued) 500 TC = 25oC FIGURE 3. MAXIMUM C...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3

INTERSIL[Intersil Corporation]
Part No. FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text ...UNITS V V nA A V 3. In Situ Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Eff...VOLTAGE (V) -100 -200 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4...
Description 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 45.96K  /  8 Page

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    FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547

INTERSIL[Intersil Corporation]
Part No. FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547
OCR Text ...2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effe...VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS S...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

File Size 48.81K  /  8 Page

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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ... UNITS V V nA A V 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Eff...VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS S...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 60.40K  /  8 Page

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    IRHM7460SE

IRF[International Rectifier]
Part No. IRHM7460SE
OCR Text ...nt Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetit...Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Re...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

File Size 99.74K  /  4 Page

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    LC9997M LC9997

SANYO[Sanyo Semicon Device]
Part No. LC9997M LC9997
OCR Text ...ignal Color irregularity (mura) Gamma characteristics S GR GB VF Vsat SM Vdrk Vcs Test method 1 Test method 1 Test method 1 Test method 2 Test method 3, *5 Test method 4, *6 Test method 5. Ta = 55C Test method 6 1 600 0.04 7 50 0.7 2.0 130...
Description 1/5-Inch Frame Transfer CCD NTSC Color Image Sensor

File Size 185.54K  /  11 Page

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