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![FRE9160R FRE9160D FN3268 FRE9160H RE9160H](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation]
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Part No. |
FRE9160R FRE9160D FN3268 FRE9160H RE9160H
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OCR Text |
...ults From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Pe...Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
Description |
30 A, 100 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA From old datasheet system 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs 30A/ -100V/ 0.095 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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File Size |
48.40K /
6 Page |
View
it Online |
Download Datasheet
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![FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
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OCR Text |
... UNITS V V nA A V
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Eff...VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. FORWARD BIAS S... |
Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs From old datasheet system Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
60.40K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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