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IWS505 SW45AZ STC89C52 FM120 PIMC31 FSDM1265 2SD1766 AGM6448Y
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    GI821 GI828 GI820 GI826 GI822 GI824

GE Security, Inc.
GE[General Semiconductor]
Part No. GI821 GI828 GI820 GI826 GI822 GI824
Description Aluminum Electrolytic Radial Lead extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 63V; Case Size: 16x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead extremely Low Impedance Capacitor; Capacitance: 680uF; Voltage: 63V; Case Size: 16x31.5 mm; Packaging: Bulk
Fast Switching Plastic Rectifier(快速转换塑胶整流器)

File Size 44.20K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. FDG311N
Description High performance trench technology for extremely low RDS(ON).

File Size 144.26K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2313
Description High dense cell design for extremely low RDS(ON).

File Size 223.01K  /  2 Page

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    Nexperia
Part No. PESD4V0Z1BCSF
Description extremely low capacitance bidirectional ESD protection diode

File Size 704.43K  /  16 Page

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    TY Semiconductor Co., Ltd
Part No. CES2321
Description High dense cell design for extremely low RDS(ON).

File Size 216.48K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2310
Description High dense cell design for extremely low RDS(ON).

File Size 237.41K  /  2 Page

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    PESD5V0F1USF PESD5V0F1USF-15

NXP Semiconductors
Part No. PESD5V0F1USF PESD5V0F1USF-15
Description extremely low capacitance unidirectional ESD protection diode

File Size 290.06K  /  12 Page

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    TY Semiconductor Co., L...
Part No. FDG6316P
Description High performance trench technology for extremely low RDS(ON)

File Size 197.06K  /  2 Page

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    TY Semiconductor Co., L...
Part No. FDG328P
Description High performance trench technology for extremely low RDS(ON)

File Size 51.30K  /  2 Page

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    PMGD290XN

NXP Semiconductors
Part No. PMGD290XN
Description Dual N-channel mTrenchMOS extremely low level FET

File Size 116.60K  /  12 Page

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