|
|
|
ON Semi
|
Part No. |
MCR12DSNT4 MCR12DSMT4 ON1801
|
OCR Text |
...oltage (VD = 0.67 X Rated VDRM, exponential Waveform, RGK = 1.0 KW, TJ = 110C) Symbol dv/dt 2.0 10 -- Min Typ Max Unit V/ms
(1) Surface mounted on minimum recommended pad size. (2) 1/8 from case for 10 seconds. (3) Ratings apply for nega... |
Description |
SCRs 12 AMPERES RMS 600 thru 800 VOLTS From old datasheet system
|
File Size |
141.27K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
ST Microelectronics
|
Part No. |
USBULC6-2F3
|
OCR Text |
... v i rm v rm = 3 v 100 na r d exponential wave form 8/20 s, i pp = 1 to 5 a 1.6 ti r = 1 ma 5 10 -4 / c c line v line = 0 v, v osc = 30 mv, f = 1 mhz 1.2 pf i v i f i rm i pp v rm v f v br slope = 1/rd v cl usb connector vbus d- d... |
Description |
Dual ultra low capacitance protection
|
File Size |
201.75K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
MOTOROLA[Motorola, Inc]
|
Part No. |
MCR8DSN MCR8DSM
|
OCR Text |
...oltage (VD = 0.67 X Rated VDRM, exponential Waveform, RGK = 1.0 KW, TJ = 110C) Symbol tgt -- dv/dt 2.0 10 -- 2.0 5.0 Min Typ Max Unit
ms
V/ms
(1) Ratings apply for negative gate voltage or RGK = 1.0 KW. Devices shall not have a posit... |
Description |
Silicon Controlled Rectifiers
|
File Size |
125.31K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
IGBT 晶体
|
Part No. |
MSAGA11F120D
|
OCR Text |
...ge current (10 m s x 4ms double exponential, see figure 2) 55 amps i cm1 pulsed collector current ? @ t c = 25 c 44 amps i cm2 pulsed collector current ? @ t c = 110 c 22 amps i csurge2 surge current: tp= 2 us ( ton= 1.5 m s; t... |
Description |
Fast IGBT Die for Implantable Cardio Defibrillator Applications
|
File Size |
221.43K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-SCOTTSDALE
|
Part No. |
MLL1.4KESD90A MLL1.4KESD10 MLL1.4KESD100 MLL1.4KESD100A MLL1.4KESD10A MLL1.4KESD11 MLL1.4KESD110 MLL1.4KESD110A MLL1.4KESD11A MLL1.4KESD12 MLL1.4KESD120 MLL1.4KESD120A MLL1.4KESD12A MLL1.4KESD13 MLL1.4KESD130 MLL1.4KESD130A MLL1.4KESD13A MLL1.4KESD14 MLL1.4KESD14A MLL1.4KESD15 MLL1.4KESD150 MLL1.4KESD150A MLL1.4KESD15A MLL1.4KESD16 MLL1.4KESD160 MLL1.4KESD160A MLL1.4KESD16A MLL1.4KESD17 MLL1.4KESD170 MLL1.4KESD170A MLL1.4KESD170CA MLL1.4KESD17A MLL1.4KESD18 MLL1.4KESD18A MLL1.4KESD20 MLL1.4KESD20A MLL1.4KESD22 MLL1.4KESD22A MLL1.4KESD24 MLL1.4KESD24A MLL1.4KESD26 MLL1.4KESD26A MLL1.4KESD28 MLL1.4KESD28A MLL1.4KESD30 MLL1.4KESD30A MLL1.4KESD33 MLL1.4KESD33A MLL1.4KESD36 MLL1.4KESD36A MLL1.4KESD40 MLL1.4KESD40A MLL1.4KESD43 MLL1.4KESD43A MLL1.4KESD45 MLL1.4KESD45A MLL1.4KESD48 MLL1.4KESD48A MLL1.4KESD5.0 MLL1.4KESD5.0A MLL1.4KESD51 MLL1.4KESD51A MLL1.4KESD54 MLL1.4KESD54A MLL1.4KESD58 MLL1.4KESD58A MLL1.4KESD6.0 MLL1.4KESD6.0A MLL1.4KESD6.5 MLL1.4KESD6.5A MLL1.4KESD60 MLL1.4KESD60A MLL1.4KESD64 MLL1.4KESD64A MLL1.4KESD7.0 MLL1.4KESD7.0A MLL1.4KESD7.5 MLL1.4KESD7.5A MLL1.4KESD70 MLL1.4KESD70A MLL1.4KESD75 MLL1.4KESD75A MLL1.4KESD78 MLL1.4KESD78A MLL1.4KESD8.0 MLL1.4KESD8.0A MLL1.4KESD
|
OCR Text |
...50, Method 1020 (approx. 150 ns exponential wave) * Absorbs ESD level transients* of 1400 Watts per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave, or one microsecond transients up to 400 watts. See Figure #1 and #2 for overall t... |
Description |
SURFACE MOUNT TVS Transient Voltage Suppressor SURFACE MOUNT TVS 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
|
File Size |
201.15K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
ONSEMI[ON Semiconductor]
|
Part No. |
MMT08B064T3G MMT08B064T3
|
OCR Text |
...t Current Non-Repetitive Double exponential Decay Waveform (-25C Initial Temperature) (Notes 1 and 2) 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec Nonrepetitive Peak On-State Current 60 Hz F... |
Description |
From old datasheet system Thyristor Surge Protectors
|
File Size |
46.50K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
ONSEMI[ON Semiconductor]
|
Part No. |
MMT08B310T3_05 MMT08B310T3 MMT08B310T3G MMT08B310T305
|
OCR Text |
...t Current Non-Repetitive Double exponential Decay Waveform (Notes 1 and 2) 10 x 1000 sec (-25C Initial Temperature) 8 x 20 sec 10 x 160 sec 10 x 560 sec Maximum Non-Repetitive Rate of Change of On-State Current Double exponential Waveform, ... |
Description |
Thyristor Surge Protectors High Voltage Bidirectional TSPD
|
File Size |
54.57K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
Part No. |
RBO08-40T RBO08-40G RBO08-40M
|
OCR Text |
...ig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
VCL (V) 45 40
Pp p (... |
Description |
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO REVERSED BATTERYAND OVER VOLTAGE PROTECTION CIRCUIT (RBO)
|
File Size |
153.20K /
14 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|