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  0.4v ms Datasheet PDF File

For 0.4v ms Found Datasheets File :: 15343    Search Time::1.516ms    
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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ541 Absolute Maximum Ratings (Ta = 25...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ542 Absolute Maximum Ratings (Ta = 25...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ544

HITACHI[Hitachi Semiconductor]
Part No. 2SJ544
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ544 Absolute Maximum Ratings (Ta = 25...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.22K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ551(L),2SJ551(S) Ab...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ553(L),2SJ553(S) Absolute...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SJ555 Absolute Maximum Ratings (Ta = ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ... 2157 [2SJ560] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at...4V ID=-100mA, VGS=-2.5V -0.4 1.1 1.6 420 630 600 1000 Conditions Ratings min -20 -10 10 -1.4 typ max...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ561

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ561
OCR Text ...2062A [2SJ561] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta...4V -1.0 0.8 1.1 360 690 600 970 Conditions Ratings min -30 -10 10 -2.5 typ max Unit V A A V S m m ...
Description    Ultrahigh-Speed Switching Applications
Zener Diode,Single, Two Terminal,33V V(Z),5%,DO-5 RoHS Compliant: Yes 超高速开关应

File Size 158.24K  /  4 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ...2062A [2SJ562] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta...4V ID=-200mA, VGS=-2.5V -0.4 1.8 2.6 245 340 315 480 Conditions Ratings min -20 -10 10 -1.4 typ max ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -150 mA,VGS = -...4V -50m A, -150m A -10V 1 -50m A, -150m A, -300m A Pulse Test 0 40 80 120 Tc ( C) 160 Case Temperatu...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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For 0.4v ms Found Datasheets File :: 15343    Search Time::1.516ms    
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