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				Productwell Precision Elect.CO.,LTD
Part No.	100 120 1R2 102 180 6R8 470 2R1 220 4R7 680 3R9 150 560
OCR Text	0.3 6.6 0.3 4.6 6.2 0.3 C 1.5 1-1 7.3 0.2 5.0 7.3 0.2 C 1.8 1-2 12 0.3 100 12 0.3 7.6 C 5.0...23m 4.90 7.96 M 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K ...
Description	SHIELDED SMT POWER INDUCTORS
File Size	173.55K / 4 Page	View it Online	Download Datasheet

				UTC
Part No.	50N06
OCR Text	...Dissipation (TC = 25 ) 130 W PD 0.9 W/ Derating Factor above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently da...
Description	N-CHANNEL POWER MOSFET
File Size	169.29K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	3710S IRF3710L IRF3710LPBF IRF3710S IRF3710SPBF IRF3710STRL IRF3710STRR
OCR Text	...te)** Typ. --- --- Max. 0.75 40 Units C/W www.irf.com 1 12/30/02 IRF3710S/IRF3710L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd...
Description	100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Search --To IRF3710S
File Size	572.23K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4466
OCR Text	...D=9.4A TJ=125C 1 20 17 24 27 24 0.75 1 4.3 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 118 85 0.8 11.3 VGS=10V, VDS=15V, ID=9.4A 5.7 2.1 3 4.5 VGS=10V, VDS=15V, RL=1.6, RGEN=3 IF=9.4A, dI/dt=100A/s 3.1 15.1 2.7 15.5 7.1 6.5 5 23 5 21...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	123.98K / 4 Page	View it Online	Download Datasheet

				Ningbo Foryard Optoelectronics Co., Ltd.
Part No.	FYL-10023MUGC1B
OCR Text	...eakforwardcurrent(1/10dutycycle,0.1mspulsew idth) 150 ma continuousforwardcurrent 30 ma deratinglinearfrom50 0.4 ma/ reversevoltage 5 v electrostaticdischarge(esd) 150 v operatingtemperaturerange 30 to+80 storagetemperaturerange 40 ...
Description	LED LAMP
File Size	143.96K / 3 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	ZXTN25012EFH
OCR Text	... (a) linear derating factor p d 0.73 5.84 w mw/c power dissipation at t amb =25c (b) linear derating factor p d 1.05 8.4 w mw/c power dissipation at t amb =25c (c) linear derating factor p d 1.25 9.6 w mw/c power dissipation at t amb =25...
Description	12V, SOT23, NPN medium power transistor
File Size	370.66K / 6 Page	View it Online	Download Datasheet

				Rohm
Part No.	BD3500FVM BD3501FVM BD3504FVM08 BD3502FVM
OCR Text	...esistors, optional out put from 0.65v to 2.5v can be set. in addition, since voltage output start-up time can be adjusted by us ing the...23m vout iout (1.075v ) (1a/div) vout iout (bd3502fvm) (1a/div) vout iout (bd3502fvm) (1a/div) v...
Description	Ultra Low Dropout Linear Regulator Controllers for PC Chipsets
File Size	686.30K / 17 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0157D
OCR Text	... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0157d uses advanced trench technolog...23m ? @ v gs =10v special process technology for high esd capability high density cell de...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	296.64K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0157
OCR Text	... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0157 uses advanced trench technology...23m ? @ v gs =10v (typ:13.3m ? ) special process technology for high esd capability high...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	361.92K / 7 Page	View it Online	Download Datasheet

For 0.23m Found Datasheets File :: 199 Search Time::1.406ms
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