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APEM SA
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Part No. |
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 OC71 ACY35 ACY39 ASY80 ASY81 ASY76 ASY77 2N166 2N1731 ACY40
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Description |
transistor | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 transistor | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 transistor | BJT | PNP | 10MA I(C) | TO-1 transistor | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 transistor | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 transistor | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 transistor | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 transistor | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 transistor | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 transistor | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 transistor | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 transistor | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 transistor | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 transistor | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit transistor | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
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File Size |
327.81K /
4 Page |
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Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
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Part No. |
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 AD131V AD148IV ADY11 ADY13 ADY10 ADY26 ADY20 ADY12 AUY19IV AD149IV AD132V AD131IV AUY19V ADZ11 ASZ1015 ASZ1016 ASZ1017 ASZ1018 AUY19III AD163II AD131III AUY18IV AUY20IV AUY21III AUY18V AD163IV
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Description |
transistor | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 transistor | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 transistor | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 transistor | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 transistor | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 transistor | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR transistor | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 transistor | BJT | PNP | 30V V(BR)CEO | TO-8 transistor | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 transistor | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 transistor | BJT | PNP | 40V V(BR)CEO | 20A I(C) transistor | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 transistor | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 transistor | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 transistor | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 transistor | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| transistor | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| transistor | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 transistor | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| transistor | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| transistor | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
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File Size |
333.05K /
4 Page |
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CDIL[Continental Device India Limited]
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Part No. |
CSD882P CSD882R CSD882 CSD882E CSD882Q
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Description |
10.000W Medium Power NPN Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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File Size |
133.82K /
3 Page |
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it Online |
Download Datasheet |
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CDIL[Continental Device India Limited]
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Part No. |
CSB772P CSB772R CSB772 CSB772E CSB772Q
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Description |
10.000W Medium Power PNP Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
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File Size |
132.88K /
3 Page |
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it Online |
Download Datasheet |
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Renesas Electronics, Corp. NXP Semiconductors N.V.
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Part No. |
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UMH03 FX6KMH06 FX6VSH06 FX70VSH03 FX3ASH06 FX30VSH06 FX3VSH06 FX30KMH03
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Description |
transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB transistor | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
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File Size |
437.22K /
7 Page |
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it Online |
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Price and Availability
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