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-13a Datasheet PDF File

For -13a Found Datasheets File :: 5385 Search Time::1.75ms
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				Icemos Technology
Part No.	ICE60N150FP
OCR Text	... r ds (on) v gs =10v, i d =13a, t j =25 o c - 0.13 0.15 ? v gs =10v, i d =13a, t j =150 o c - 0.40 - gate resistance r g f =1 mhz, open drain - 4 - ? dynamic characteristics ...
Description	N-Channel Enhancement Mode MOSFET
File Size	521.61K / 9 Page	View it Online	Download Datasheet

				AOSMD[Alpha & Omega Semiconductors]
Part No.	AO4720
OCR Text	... Features VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11m (VGS = 10V) RDS(ON) < 17.5m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolu...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	125.69K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDZ206P
OCR Text	... 0 V, IS = -1.8 A Voltage IF = -13a, Diode Reverse Recovery Time Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) -0.7 34 38 -1.8 -1.2 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 ...
Description	P-Channel 2.5V Specified PowerTrench
File Size	210.84K / 6 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SK3112
OCR Text	...) = 110m MAX. (VGS = 10 V, ID = 13A) Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Built-in gate protection diode Surface mount device available 2.54 5.08 +0.1 -0.1 +0.2 2....
Description	MOS Field Effect Transistor
File Size	42.06K / 1 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ657
OCR Text	...DS=-10V, ID=--1mA VDS=-10V, ID=-13a Ratings min --100 --1 10 -1.2 21 30 --2.6 typ max Unit V A A V S Marking : J657 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that ca...
Description	General-Purpose Switching Device
File Size	31.12K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers List of Unclassifed Man...
Part No.	2230 2233 2232 2231 150 152 2228 2229
OCR Text	...ansi/neda lr6 lr14 lr20 15a 14a 13a holds cat. no. of no. cells 146 2 147 3 148 4 149 2 150 3 151 4 aa cell c cell lw iec ansi/neda 2.250 (57.2) 2.250 (57.2) 2.218 (56.3) 2.218 (56.3) 2.687 (68.3) 2.687 (68.3) _ .625 (15.9) _ 1.00...
Description	INTERCONNECT BATTERY HOLDERS
File Size	342.60K / 1 Page	View it Online	Download Datasheet

				Icemos Technology
Part No.	ICE13N65
OCR Text	...t summary i d t a =25 o c 13a max v ( br)dss i d =250ua 650v min r ds(on) v gs =10v 0.25 typ q g v ds =480v 59nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description	N-Channel Enhancement Mode MOSFET
File Size	556.12K / 9 Page	View it Online	Download Datasheet

				Icemos Technology
Part No.	ICE13N65FP
OCR Text	...t summary i d t a =25 o c 13a max v ( br)dss i d =250ua 650v min r ds(on) v gs =10v 0.25 typ q g v ds =480v 59nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description	N-Channel Enhancement Mode MOSFET
File Size	521.21K / 9 Page	View it Online	Download Datasheet

				Fuji Electric ETC List of Unclassifed Manufacturers
Part No.	2SK3770-01MR
OCR Text	...DS=96V VGS=0V VGS=30V VDS=0V ID=13A VGS=10V ID=13A VDS=25V VDS=75V VGS=0V f=1MH VCC=48V ID=13A VGS=10V RGS=10 VCC=60V ID=26A VGS=10V IF=26A VGS=0V Tch=25C IF=26A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambie...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	91.48K / 4 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4424
OCR Text	...VGS=0 VDS=24V,VGS=0 VGS=10V, ID=13A VGS=4.5V, ID=10A 0.02 _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 9 14 35 _ _ _ _ 23 6 15 13 9 35 17 1920 410 300 21 0.9 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Rg _ _ ...
Description	N-Channel Enhancement Mode Power Mos.FET
File Size	292.10K / 4 Page	View it Online	Download Datasheet

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